unisonic technologies co., ltd ut4800 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2008 unisonic technologies co., ltd qw-r502-174.a n-channel enhancement mode ? description the ut4800 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? symbol gate source drain *pb-free plating product number: ut4800l ? ordering information ordering number normal lead free plating package packing UT4800-S08-R ut4800l-s08-r sop-8 tape reel ut4800-s08-t ut4800l-s08-t sop-8 tube
ut4800 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-174.a ? pin configuration
ut4800 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-174.a ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 25 v continuous drain current (note 1) i d 6.5 a pulsed drain current (note 1) i dm 40 a power dissipation p d 1.3 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol min typ max unit junction-to-ambient ja 70 95 /w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit static parameters drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 30 v drain-source leakage current i dss v ds =24 v, v gs =0 v 1 a gate-source leakage current i gss v ds =0 v, v gs = 20v 100 na on characteristics gate-threshold voltage v gs(th) v ds =v gs , i d =250 a 0.8 1.8 v v gs =10 v, i d =9a 15.5 18.5 m ? static drain-source on-resistance r ds(on) v gs =4.5 v, i d =7a 23 30 m ? switching parameters turn-on delay time t d(on) 7 15 ns turn-on rise time t r 12 20 ns turn-off delay time t d(off) 32 50 ns turn-off fall-time t f v gs =10v,v ds =15v, r l =15 ? , r gen =6 ? 14 25 ns total gate charge q g 8.7 13 nc gate-source charge q gs 1.5 nc gate-drain charge q gd v ds =15v, v gs =5.0v, i d =9a 3.5 nc drain-source diode characteristics and maximum ratings diode forward voltage v sd v gs =0v, i s =2.3a 0.75 1.2 v maximum body-diode continuous current i s 2.3 a body diode reverse recovery time t rr i f =2.3a, di/dt=100a/ s 30 60 ns note:1. repetitive rating : pulse width limited by t j 2. pulse test: pulse width 300 s, duty cycle 2% max.
ut4800 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-174.a ? typical characteristics drain current,i d (a) drain current,i d (a) v gs =10v i d =9a v gs =10v v gs =4.5v 0.040 0.032 0.024 0.016 0.008 0.000 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 on-resistance vs. drain current and gate voltage on-resistance,r ds(on) (m $ ) drain current,i d (a) junction temperature ( ) normalized on-resistance,r ds(on) ( $ ) on-resistance vs. junction temperature source current, i s (a) on-resistance, r ds(on) (m $ )
ut4800 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-174.a ? typical characteristics(cont.) v ds =15v i d =9a 6 5 4 3 2 1 0 0246810 0 4 8 12 16 20 0 200 400 600 800 1000 1200 c oss c iss c rss gate to source voltage,v gs (v) gate charge,q g (nc) gate-charge characteristics capacitance characteristics c a p a c i t a n c e ( p f ) drain to source voltage,v ds (v) power (w) variance,v gs(th) (v) t c =25 single pulse dc 10s 10ms 100ms 1s 1ms r ds(on) limited 100 10 1 0.1 0.01 0.1 1 10 100 drain to source voltage, v ds (v) drain current, i d (a) safe operating area,junction-to-foot
ut4800 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-174.a ? typical characteristics(cont.) d=0.5 0.2 0.1 0.05 0.02 single pulse 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 square wave puls e duration (sec) normalized thermal transient impedance,junction-to-ambient normalized effective transient thermal impedance p dm t 1 t 2 1.duty cycle,d=t 1 /t 2 2.per unit base=r thja =70 /w 3.t jm -t a =p dm z thja (t) 4.surface mounted normalized effective transient thermal impedance utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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